bfs 17w oct-12-1999 1 npn silicon rf transistor for broadband amplifiers up to 1 ghz at collector currents from 1 ma to 20 ma 1 3 vso05561 2 type marking pin configuration package bfs 17w mcs 1 = b 2 = e 3 = c sot-323 maximum ratings parameter symbol unit value collector-emitter voltage v ceo v 15 collector-base voltage v cbo 25 2.5 v ebo emitter-base voltage collector current i c ma 25 peak collector current , f = 10 mhz i cm 50 280 mw p tot total power dissipation , t s 93 c 1) junction temperature 150 t j c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance junction - soldering point r thjs 205 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bfs 17w oct-12-1999 2 electrical characteristics a t a = 25c, unless otherwise specified. parameter symbol unit values min. max. typ. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 - v - collector-base cutoff current v cb = 10 v, i e = 0 v cb = 25 v, i e = 0 i cbo - - - - a 0.05 10 emitter-base cutoff current v eb = 2.5 v, i c = 0 i ebo - 100 - dc current gain i c = 2 ma, v ce = 1 v i c = 25 ma, v ce = 1 v h fe 20 20 - 150 - - 70 collector-emitter saturation voltage i c = 10 ma, i b = 1 ma v cesat - 0.1 0.4 v
bfs 17w oct-12-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values min. max. typ. ac characteristics transition frequency i c = 2 ma, v ce = 5 v, f = 200 mhz i c = 25 ma, v ce = 5 v, f = 200 mhz f t 1 1.3 1.4 2.5 ghz - - collector-base capacitance v cb = 5 v, f = 1 mhz c cb 0.6 - pf 0.8 collector-emitter capacitance v ce = 5 v, f = 1 mhz c ce 0.26 - - input capacitance v eb = 0.5 v, i c = 0 , f = 1 mhz c ibo - - 1.45 output capacitance v ce = 5 v, v be = 0 , f = 1 mhz c obs - - 1.5 noise figure i c = 2 ma, v ce = 5 v, f = 800 mhz, z s = 0 f 3.5 - db 5 transducer gain i c = 20 ma, v ce = 5 v, z s = z l = 50 , f = 500 mhz | s 21e | 2 12.7 - - linear output voltage i c = 14 ma, v ce = 5 v, d im = 60 db, f 1 = 806 mhz, f 2 = 810 mhz, z s = z l = 50 v 01 = v 02 - mv - 100 third order intercept point i c = 14 ma, v ce = 5 v, z s = z l = 50 , f = 800 mhz ip 3 - 23 - dbm
bfs 17w oct-12-1999 4 total power dissipation p tot = f ( t a *, t s ) * package mounted on alumina 0 20 40 60 80 100 120 c 150 t a ,t s 0 20 40 60 80 100 120 140 160 180 200 220 240 mw 300 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bfs 17w oct-12-1999 5 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 4 8 12 16 20 v 26 v cb 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pf 1.3 c cb transition frequency f t = f ( i c ) v ce = parameter 0 5 10 15 20 ma 30 i c 0.0 0.5 1.0 1.5 2.0 ghz 3.0 f t 10v 5v 3v 2v 1v 0.7v
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